| PART |
Description |
Maker |
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier
1000V, 1.0A glass passivated rectifier
50V, 1.0A glass passivated rectifier
200V, 1.0A glass passivated rectifier
100V, 1.0A glass passivated rectifier
600V, 1.0A glass passivated rectifier
800V, 1.0A glass passivated rectifier
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http://
WTE[Won-Top Electronics]
|
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
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STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| BT151-500R |
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
SCR, 12 A, 15mA, 500 V, SOT78
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NXP Semiconductors
|
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
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MDE Semiconductor
|
| 2SD866 2SD866AR 2SD866P 2SD866Q 2SD866AP 2SD866AQ |
Si NPN triple diffused planar. Horisontal deflection output.
SI NPN EPITAXIAL PLANAR
2SD866
Si NPN triple diffused planar. High hFE, AF power amplifier.
|
PANASONIC[Panasonic Semiconductor]
|
| FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥
Bridge Rectifiers (Power) 桥式整流器（电力
10 Amp Glass Passivated Bridge Rectifier
10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| S3K-13 S3MB |
Glass Passivated Die Construction
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
| HER30-1500G |
Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞1500V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?500V CURRENT 3.0A
|
Gulf Semiconductor
|
| MMBT5400 |
(MMBT5400 / MMBT5401) Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren
|
Diotec Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
|
| 1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N |
(1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
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http://
RECTRON[Rectron Semiconductor]
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